Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

Implantation Damage Formation in GaN and ZnO

The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

In pursuit of p-type doping, we have implanted GaN with Mg ions at 200 and 500 keV with the substrate temperature maintained at −150 cold or +300 °C hot during ion irradiation. The samples have been annealed at 1000 °C postion implantation. The radiation damage peak position and its profile , the dopant distribution, and the damage stability during annealing were all shown to be dependent upon ...

LATTICE LOCATION AND OPTICAL ACTIVATION OF RARE EARTH IMPLANTED GaN

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (≈10 cm) implantation, both in the asimplanted state and after annealing up to 900°C, the...

Rare earth ion implantation for silicon based light emission: From infrared to ultraviolet

Using ion implantation different rare earth luminescent centers (Gd, Tb, Eu, Ce, Tm, Er) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained fro...

The high sensitivity of InN under rare earth ion implantation at medium range energy

In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several microns were produced by Hydride Vapour Phase Epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ...